The Anneal Temperature Effect on the BTO and NZFO Flims and Their Capacitance - Inductance Integrated Device

Source:
By:Zhen Zheng, Yuhao Shi, Xinyu Liang, Chunqing Wang

DOI: https://doi.org/10.30564/ssid.v1i1.606

Abstract:

In this paper, a novel capacitor-inductor integrated structure was proposed. The dielectric material BaTiO₃ (BTO) and ferromagnetic material Ni_0.5Zn_0.5Fe₂O₄ (NZFO) was prepared by sol-gel method. Phase composition and morphology of the thin films were characterized by XRD, SEM and AFM. The effect of annealing temperature on film crystallinity, surface morphology, dielectric properties and ferromagnetism were investigated. When the annealing temperature was 700 °C, the BTO film and the NZFO film got the better dielectric properties and ferromagnetic properties. Then the BTO thin film was spin-coated on the substrate, and the NZFO thin film was in-situ sintered on the BTO thin film. The composite film possessed both ferromagnetism and dielectric properties. Finally, an inductive coil was fabricated on the BTO/NZFO composite film to produce a capacitance and inductance integrated device.

References:

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